1N4747AHB0G

1N4747AHB0G

  • Description:DIODE ZENER 20V 1W DO204AL
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk

SKU:cd8a448d0e60 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE ZENER 20V 1W DO204AL
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk
  • Voltage - Zener (Nom) (Vz):20 V
  • Tolerance:±5%
  • Power - Max:1 W
  • Impedance (Max) (Zzt):80 Ohms
  • Current - Reverse Leakage @ Vr:5 µA @ 15.2 V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:DO-204AL, DO-41, Axial
  • Voltage - Forward (Vf) (Max) @ If:-
  • Grade:Automotive
  • Qualification:AEC-Q101

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1N4747AHB0G

Overview

The 1N4747AHB0G is a single silicon Zener diode manufactured by Taiwan Semiconductor Corporation. It provides a nominal Zener voltage of 20 V with a tolerance of 5%. The device is rated for a power dissipation of 1 W and operates within a temperature range from -65 °C to +200 °C. Key electrical characteristics include a maximum reverse leakage current of 5 µA and a Zener impedance of 22 Ohms at a test current of 12.5 mA. It utilizes a DO-41-2 axial through-hole package.

Feature Summary

  • Glass passivated junction construction for enhanced environmental stability
  • High thermal performance supporting operation up to 200 °C
  • Low inductance design suitable for general-purpose applications

Applications

  • Voltage regulation circuits
  • Reference voltage sources
  • Overvoltage protection stages

Procurement Notes

Verify the specific suffix HB0G against the manufacturer's official documentation to confirm exact packaging and compliance details. Ensure the requested quantity matches available factory stock, as lead times may vary. Confirm RoHS and REACH status directly with the supplier or datasheet before finalizing procurement orders.

Selection Notes

Select this component when a 20 V reference with high-temperature capability is required. The DO-41 package supports standard through-hole mounting processes. Verify that the 1 W power rating and 22 Ohm impedance align with the circuit's thermal and load requirements.

Part Context

This part belongs to the 1N4747 series of power Zener diodes. It shares the fundamental 20 V specification with other manufacturers' variants but features Taiwan Semiconductor's specific manufacturing process and packaging configuration. The HB0G suffix denotes the specific commercial grade and packaging format offered by this producer.

Replacement Considerations

Direct substitutes include 1N4747A from onsemi, Vishay, and Nexperia. These alternatives share identical electrical ratings and DO-41 mechanical dimensions. Verify pinout compatibility and thermal resistance specifications before implementation.

1N4747AHB0G1N4747AHB0G

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