1N4770

Overview

The Microchip Technology 1N4770 is a through-hole Zener diode housed in a DO-35 axial package. It features a nominal Zener voltage of 9.1 V with a tolerance of ±5%. The device has a maximum power dissipation of 500 mW and operates within a temperature range of 0°C to 75°C. Key electrical parameters include a maximum reverse leakage current of 10 µA at 25°C and a maximum Zener impedance of 200 Ohms.

Feature Summary

• Temperature compensated Zener reference design
• Metallurgically bonded double plug construction
• Low current operation range

Applications

• Voltage regulation circuits
• Temperature compensated reference applications
• Low current protection stages

Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure compliance with quality standards. Confirm that the component matches the DO-35 package dimensions and lead finish specifications required by the assembly process. Cross-reference the part number against official Microchip databases to validate authenticity before integration into production lines.

Selection Notes

Select this component for applications requiring stable voltage references in low-current environments. The metallurgical bond ensures reliability under thermal cycling. Ensure the circuit design accommodates the 500 mW power limit and the specific impedance characteristics at the operating current point.

Part Context

This device belongs to the 1N4765 through 1N4774A series of Zener diodes manufactured by Microchip Technology. These components are designed for general-purpose voltage regulation and reference applications, offering consistent performance across the specified temperature range.

Replacement Considerations

Direct substitutes within the same series include 1N4770A and 1N4770/TR. Verify pinout compatibility and package integrity when transitioning between bulk and reel packaging variants.