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1N5227B-G is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Comchip Technology. Its product description is DIODE ZENER 3.6V 500MW DO35. Review the specifications below when checking this part for your BOM.
The Comchip Technology 1N5227B-G is a silicon voltage regulator diode housed in the DO-35 glass axial leaded package. It provides a nominal Zener voltage of 3.6 V at a test current of 20 mA with a maximum dynamic impedance of 24 Ohms. The device supports a steady-state power dissipation of 500 mW and operates within a junction temperature range up to 175°C. It features a maximum reverse leakage current of 50 µA at 6 V and exhibits a negative temperature coefficient of -0.065 %/K.
Verify that the ordering suffix '-G' corresponds to RoHS compliance as indicated by the manufacturer datasheet. Confirm the specific package dimensions match the DO-35 standard before integration. Ensure thermal management aligns with the specified derating curves for ambient temperatures exceeding 25°C.
Select this component when a precise 3.6 V reference is required in a through-hole configuration. Consider the negative temperature coefficient for thermal stability requirements. Evaluate the 500 mW power rating against expected load conditions to ensure operation remains within safe thermal limits.
This part belongs to the 1N5221B-G through 1N5267B-G series, which covers a wide voltage range from 2.4 V to 75 V. All members share the same DO-35 glass axial package and 500 mW power dissipation capability, differing primarily in their specific Zener voltage ratings and associated impedance characteristics.
Cross-reference with other manufacturers offering the JEDEC registered 1N5227B designation. Verify that substitute parts maintain the DO-35 footprint and 500 mW rating. Check for equivalent Zener voltage tolerance and dynamic impedance specifications to ensure circuit compatibility.
The temperature coefficient is -0.065 %/K at the test current of 20 mA.
Polarity is indicated by a cathode band marked on the glass body of the diode.
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