1N5230B

Single Zener Diodes Overview

The Fairchild Semiconductor 1N5230B is a silicon epitaxial planar Zener diode housed in a hermetically sealed glass DO-35 axial leaded package. It provides a nominal Zener voltage of 4.7 V with a tolerance of ±5% and a maximum power dissipation of 0.5 W at ambient temperature. The device operates within a junction temperature range of -65 °C to +200 °C, featuring low noise characteristics suitable for precision regulation applications.

Single Zener Diodes Feature Summary

• Hermetically sealed glass construction for environmental stability
• Epitaxial planar silicon design ensuring high reliability
• Low noise performance for sensitive signal conditioning

Single Zener Diodes Applications

• Precision voltage reference circuits
• Overvoltage protection in critical systems
• Voltage clamping in analog signal paths

Single Zener Diodes Procurement Notes

Verify the manufacturer marking matches Fairchild Semiconductor specifications. Confirm the DO-35 package dimensions and lead finish align with your assembly requirements. Ensure the part number suffix corresponds to the correct tape-and-reel or bulk packaging format required by your production line.

Single Zener Diodes Selection Notes

Select this component when a hermetically sealed, low-noise Zener diode is required for high-temperature environments up to 200 °C. The DO-35 package offers robust mechanical stability compared to smaller surface-mount alternatives, making it suitable for through-hole designs requiring long-term reliability.

Single Zener Diodes Part Context

This component belongs to the standard 1N52xx series of 500 mW Zener diodes. The 'B' suffix indicates a ±5% voltage tolerance, distinguishing it from looser tolerance variants. It serves as a fundamental discrete semiconductor element for voltage regulation tasks in industrial and commercial electronics.

Single Zener Diodes Replacement Considerations

Equivalent parts include the Vishay 1N5230B and Microchip 1N5230B. Verify pinout compatibility and thermal resistance parameters before substitution.