2EDL5023U2DXTMA1

Gate Driver Overview

The 2EDL5023U2DXTMA1 is a high-side and low-side gate driver IC from Infineon Technologies, designed for driving MOSFETs and GaN FETs. It features a bootstrap supply configuration with a maximum voltage rating of 120 V. The device provides independent high and low-side outputs with peak drive currents of 3 A. Key electrical parameters include a minimum supply voltage of 4.5 V and a maximum of 5.5 V. Propagation delays are limited to 30 ns for both turn-on and turn-off states. Switching speeds are characterized by rise and fall times of 4.4 ns and 3.5 ns, respectively. The component operates within a temperature range of -40 °C to +150 °C and utilizes a PG-TSNP-12-5 surface-mount package.

Gate Driver Feature Summary

• Integrates independent high-side and low-side drivers in a single compact package
• Supports bootstrap operation for high-side switching applications up to 120 V
• Provides strong 3 A peak output current capability for fast switching
• Features TTL-compatible logic inputs for straightforward interface

Gate Driver Applications

• Half-bridge MOSFET gate driving
• DC-DC converter power stages
• Telecommunications power supplies
• GaN FET switching control

Gate Driver Procurement Notes

Verify the part status carefully as this component is marked NRND (Not Recommended for New Designs). Ensure that existing inventory or last-time-buy options align with long-term production requirements. Confirm that the PG-TSNP-12-5 package footprint matches the PCB design. Check RoHS compliance details through official manufacturer channels before finalizing procurement decisions.

Gate Driver Selection Notes

Select this driver when a non-isolated, bootstrap-fed solution is required for half-bridge topologies. The 120 V rating suits medium-voltage applications. Consider the 3 A drive strength against load capacitance requirements. Verify that the 4.5 V to 5.5 V supply range matches the system logic levels. Evaluate thermal performance given the +150 °C maximum operating temperature limit.

Gate Driver Part Context

This part belongs to Infineon's 2EDL series of gate drivers, which focuses on efficient power management solutions. The series targets applications requiring reliable switching of power semiconductors without galvanic isolation. The specific model integrates standard high-side and low-side functions into a unified silicon implementation.

Gate Driver Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the NRND status, alternative components should be evaluated based on pin compatibility, drive current, and voltage ratings.