Gate Driver 2EDN7524RXTMA1 product image

2EDN7524RXTMA1

$0.77
  • Description:IC GATE DRVR LOW-SIDE 8TSSOP
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c7b95fa90498 Category: Brand:

  
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2EDN7524RXTMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR LOW-SIDE 8TSSOP. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for 2EDN7524RXTMA1

  • Description:IC GATE DRVR LOW-SIDE 8TSSOP
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:4.5V ~ 20V
  • Logic Voltage - VIL, VIH:1.1V, 1.98V
  • Current - Peak Output (Source, Sink):5A, 5A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):5.3ns, 4.5ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:PG-TSSOP-8
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

Gate Driver datasheet and documents for 2EDN7524RXTMA1

2EDN7524RXTMA1

Gate Driver Overview

The Infineon Technologies 2EDN7524RXTMA1 is a dual-channel low-side gate driver optimized for standard and superjunction MOSFETs as well as GaN power switches. It features a non-inverting configuration with 5 A source and sink output currents. The device operates within a supply voltage range of 4.5 V to 20 V and supports CMOS and TTL logic inputs. Key electrical parameters include a maximum propagation delay of 23 ns, rise time of 5.3 ns, and fall time of 4.5 ns. It functions reliably across an extended temperature range from -40°C to +150°C TJ.

Gate Driver Feature Summary

  • Dual-channel architecture designed for independent low-side switching applications
  • Optimized drive capability for both silicon MOSFETs and Gallium Nitride (GaN) devices
  • Robust input tolerance supporting -10 V common mode transients

Gate Driver Applications

  • Driving standard and superjunction MOSFETs in power conversion circuits
  • Gate driving for Gallium Nitride (GaN) power switch devices
  • Low-side switching stages in DC-DC converters and motor drives

Gate Driver Procurement Notes

Verify the specific ordering suffix RXTMA1 against official Infineon documentation to ensure correct packaging and tape/reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet version to ensure alignment with current design parameters before finalizing procurement orders.

Gate Driver Selection Notes

Select this component when a dual-channel low-side driver is required for high-speed switching applications involving MOSFETs or GaN FETs. Ensure the system operating voltage remains within the 4.5 V to 20 V range. Verify that the 5 A peak output current suffices for the target gate charge requirements and that the TSSOP-8 package fits the PCB layout constraints.

Gate Driver Part Context

This part belongs to the EiceDRIVER family, specifically the 2EDN series, which focuses on non-isolated gate drivers. It serves as a surface-mount solution for compact power electronics designs. The device integrates protection features suitable for industrial and consumer power management applications requiring reliable low-side control.

Gate Driver Replacement Considerations

The 2EDN7524RXUMA1 is a related variant within the same product family. Verify pinout compatibility and electrical parameter equivalence before substitution. Check current availability status as some variants may have different lifecycle statuses.

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