2N3788

Single Bipolar Transistors Overview

The Microchip Technology 2N3788 is a single NPN bipolar junction transistor designed for high-voltage power applications. It features a collector-emitter voltage rating of 325 V and a maximum collector current of 2 A. The device supports a maximum collector power dissipation of 100 W in a TO-204AA (TO-3) through-hole package. It operates within an extended temperature range from -65°C to +200°C (TJ). Key electrical characteristics include a transition frequency of 5 MHz and a collector capacitance specified in official documentation.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 325 V collector-emitter rating suitable for demanding power circuits.
• Extended thermal performance allowing operation up to 200°C junction temperature.
• Robust power handling with 100 W maximum collector dissipation in a metal TO-3 package.

Single Bipolar Transistors Applications

• Power supply circuits
• Motor control systems
• Industrial power electronics

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as the 2N3788 designation may appear across different vendors. Confirm that the received component matches the Microchip Technology specification sheet regarding pinout and absolute maximum ratings. Ensure the package type is strictly TO-204AA (TO-3) and validate the thermal resistance parameters against the official datasheet before integration into high-power designs.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and wide operating temperature ranges are required. The TO-3 package provides superior heat dissipation compared to smaller forms. Consider the 325 V rating for primary-side switching or high-voltage linear regulation. Ensure the application current does not exceed 2 A continuous limits under worst-case thermal conditions.

Single Bipolar Transistors Part Context

The 2N3788 belongs to the family of single NPN bipolar transistors optimized for power switching. It utilizes silicon planar technology housed in a hermetically sealed metal case. This construction supports high reliability in industrial environments where thermal cycling and voltage stress are significant factors.

Single Bipolar Transistors Replacement Considerations

Cross-reference with equivalent NPN power transistors offering similar 325 V ratings and TO-3 packaging. Verify pin compatibility and thermal characteristics before substitution. Ensure any replacement part meets the same -65°C to +200°C operating temperature range requirements.