Bipolar Transistor Arrays 2N3811A product image

2N3811A

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-

SKU:7a214845f7f2 Category: Brand:

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2N3811A is listed in the Bipolar Transistor Arrays range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS 2PNP 60V 50MA TO-78-6. Review the specifications below when checking this part for your BOM.

Bipolar Transistor Arrays specifications for 2N3811A

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 100µA
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1mA, 5V
  • Power - Max:600mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:-
  • Qualification:-

Bipolar Transistor Arrays datasheet and documents for 2N3811A

2N3811A

Bipolar Transistor Arrays Overview

The Central Semiconductor Corp 2N3811A is a dual silicon PNP transistor manufactured using an epitaxial planar process. It features two individual chips mounted in a hermetically sealed TO-78 metal case, designed for differential amplifier applications. The device supports a collector-base voltage of 60 V and a continuous collector current of 50 mA per die. Power dissipation is rated at 500 mW per die and 600 mW total. Operating junction temperature ranges from -65°C to +200°C. DC current gain (hFE) spans 300 to 900 at 100µA collector current. Transition frequency reaches up to 500 MHz at 1.0 mA.

Bipolar Transistor Arrays Feature Summary

  • Hermetically sealed metal package construction
  • Dual matched transistors for differential circuits
  • High operating temperature capability

Bipolar Transistor Arrays Applications

  • Differential amplifier stages
  • Precision analog signal processing
  • High-temperature electronic systems

Bipolar Transistor Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific lot date code and packaging integrity upon receipt. Ensure handling procedures comply with electrostatic discharge standards. Review the official datasheet for complete electrical specifications before integration into final designs.

Bipolar Transistor Arrays Selection Notes

Select this component when hermetic sealing and high thermal stability are required. The tight matching characteristics between the two internal transistors make it suitable for precision differential applications. Consider the TO-78 package constraints for board layout and thermal management requirements during the design phase.

Bipolar Transistor Arrays Part Context

This part belongs to the 2N3811 series of dual PNP transistors. It shares the same physical package and general function as the standard 2N3811 but offers tighter matching parameters. Both variants utilize the same epitaxial planar manufacturing process within a hermetically sealed metal case.

Bipolar Transistor Arrays Replacement Considerations

Central Semiconductor has classified all devices in the TO-78 package as End of Life. No direct replacement part numbers are provided by the manufacturer for this component. Engineers must identify alternative sources or redesign using different packaging technologies.

2N3811A2N3811A

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