2N4939

Bipolar Transistor Arrays Overview

The Central Semiconductor Corp 2N4939 is a PNP silicon epitaxial planar power transistor designed for high-voltage, high-power applications. It features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 1A. The device is housed in a TO-3 metal can package, providing robust thermal dissipation capabilities with a maximum power dissipation of 50W. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 80 at specified test conditions. The component operates within a junction temperature range of -65°C to +200°C, ensuring reliability in demanding environments.

Bipolar Transistor Arrays Feature Summary

• High voltage capability with 400V collector-emitter breakdown
• Robust thermal performance via TO-3 metal can packaging
• Suitable for linear and switching power amplifier circuits

Bipolar Transistor Arrays Applications

• High-voltage linear power amplifiers
• Switching regulator output stages
• Industrial motor control systems

Bipolar Transistor Arrays Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure compliance with project requirements. Confirm that the TO-3 package dimensions match the designated heatsink interface. Check for any lead-free or RoHS compliance markings if environmental regulations apply to the final assembly. Ensure proper electrostatic discharge handling procedures are followed during installation.

Bipolar Transistor Arrays Selection Notes

Select this component when a PNP transistor with high voltage tolerance and significant power handling is required. The TO-3 package necessitates adequate thermal management solutions due to the 50W dissipation rating. Compare the hFE range against circuit biasing requirements to ensure stable operation. Consider the transition frequency limitations for high-speed switching applications.

Bipolar Transistor Arrays Part Context

The 2N4939 belongs to the family of high-voltage PNP power transistors manufactured by Central Semiconductor Corp. It serves as a legacy alternative to discontinued devices from other manufacturers, supporting long-term production needs. The TO-3 metal case construction distinguishes it from modern surface-mount alternatives, targeting applications where ruggedness and thermal conductivity are prioritized over miniaturization.

Bipolar Transistor Arrays Replacement Considerations

Consult Central Semiconductor's cross-reference documentation for direct equivalents. Verify pinout compatibility before substituting with similar high-voltage PNP transistors from other vendors.