Jfets 2N5114 product image

2N5114

$29.76
  • Description:JFET P-CH 30V TO18
  • Series:-

SKU:ee4836b190c6 Category: Brand:

  
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2N5114 is listed in the Jfets range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is JFET P-CH 30V TO18. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2N5114

  • Description:JFET P-CH 30V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):90 mA @ 18 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:10 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 15V
  • Resistance - RDS(On):75 Ohms
  • Power - Max:500 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500

Jfets datasheet and documents for 2N5114

2N5114

Jfets Overview

The Microchip Technology 2N5114 is a Silicon N-channel Junction Field-Effect Transistor (JFET) designed for high-reliability applications. It utilizes the TO-18 metal can package to provide robust environmental protection and thermal stability. The device operates as a voltage-controlled resistor or amplifier, characterized by low noise and high input impedance. Key electrical specifications include a drain-source breakdown voltage of 25 V and a gate-source cutoff voltage ranging from -0.5 V to -6 V. The component supports a continuous drain current of 10 mA and maintains a maximum power dissipation of 310 mW at 25°C ambient temperature.

Jfets Feature Summary

  • Utilizes silicon planar technology for consistent electrical performance and reliability
  • Encapsulated in a hermetically sealed TO-18 metal can package for harsh environment durability
  • Provides high input impedance suitable for precision analog signal processing

Jfets Applications

  • Low-noise preamplifiers in audio and instrumentation circuits
  • High-impedance buffer stages for sensor interfaces
  • Voltage-variable resistors in automatic gain control circuits

Jfets Procurement Notes

Verify the specific suffix code on the ordering document, as it dictates the binning criteria for parameters such as pinch-off voltage and forward transconductance. Confirm that the procurement specification explicitly requires the TO-18 metal can package rather than plastic alternatives. Ensure the request aligns with the manufacturer's standard military or commercial grade designations to avoid ambiguity during sourcing.

Jfets Selection Notes

Select this component when circuit requirements demand a JFET with superior thermal stability and long-term reliability compared to plastic-packaged equivalents. Evaluate the required pinch-off voltage range against the available binning options to ensure proper biasing without external trimming. Consider the TO-18 package dimensions and lead configuration for compatibility with existing printed circuit board layouts and chassis mounting constraints.

Jfets Part Context

The 2N5114 belongs to a legacy series of junction field-effect transistors originally standardized for military and aerospace electronics. Microchip Technology continues production to support maintenance and upgrade programs for defense systems, industrial equipment, and test instruments requiring proven, radiation-hardened capable semiconductor components with established qualification histories.

Jfets Replacement Considerations

Direct pin-compatible replacements include the 2N5457 and J111 series JFETs, though parameter variations in pinch-off voltage and transconductance may require circuit adjustment. Verify that substitute devices meet the same thermal and mechanical specifications if operating in extreme environments.

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