2SB1427T100E

Single Bipolar Transistors Overview

The 2SB1427T100E is a PNP middle power transistor manufactured by ROHM Semiconductor. It features an MPT3 (SOT-89) surface-mount package with dimensions of 4.5mm x 4.0mm x 1.7mm. The device supports a collector current of -2A and a collector-emitter voltage of -20V. Key electrical parameters include a maximum saturation voltage of -500mV at Ic/Ib = -1/-50mA, a DC current gain (hFE) range of 390 to 820 at Vce=-6V and Ic=-500mA, and a transition frequency of 150MHz. Power dissipation is rated at 0.5W on a reference land or 2.0W on a ceramic board.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High DC current gain characteristics across operating ranges
• Robust thermal management capabilities on standard substrates

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T100 to confirm the taping code and reel specifications match your automated assembly requirements. Ensure that the marking code BJ corresponds to the intended production batch. Confirm RoHS compliance status through official documentation before finalizing component selection for regulated environments.

Single Bipolar Transistors Selection Notes

Select this component when designing low-frequency power amplifiers requiring high current handling in a compact SOT-89 footprint. Consider the hFE classification rank E if precise gain control is necessary. Evaluate thermal derating requirements based on ambient temperature and mounting conditions to ensure operation within the specified junction temperature limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1427 series of middle power transistors from ROHM. It utilizes the MPT3 package variant of the SOT-89 form factor. The device is designed for general-purpose switching and amplification applications where moderate voltage ratings and high current capacity are required in surface-mount designs.

Single Bipolar Transistors Replacement Considerations

Consult official ROHM documentation for verified pin-compatible substitutes. Verify that any alternative component matches the -20V voltage rating, -2A current capability, and MPT3 package dimensions to ensure mechanical and electrical compatibility without circuit redesign.

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BV_CBO) is -20V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into Rank E, which specifies a minimum value of 390 and a maximum of 820 under test conditions of Vce=-6V and Ic=-500mA.

What is the transition frequency of the transistor?

The transition frequency (fT) is typically 150MHz, measured at Vce=-10V, Ie=10mA, and f=100MHz.