2SB15990QL

Single Bipolar Transistors Overview

The Panasonic 2SB1599QL is a silicon PNP epitaxial planar transistor designed for power amplification. It features a MiniP3-F1 package with collector-base voltage of -50V, collector-emitter voltage of -40V, and continuous collector current of -1.5A. The device provides a forward current transfer ratio (hFE) ranging from 80 to 220 depending on the rank, with a transition frequency of 150MHz at 0.5A emitter current.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage
• Mini Power type package allowing downsizing
• Compatible with automatic insertion through tape packing

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official Panasonic specifications. Confirm that the ordering suffix 'Q' corresponds to the specific hFE rank classification documented in the datasheet. Ensure compliance with RoHS directives as stated in the manufacturer documentation before procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring low saturation voltage and compact form factors. Consider the MiniP3-F1 package for automated assembly processes. Evaluate thermal dissipation requirements based on the 1W power rating at 25°C ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SB1599 series of silicon PNP transistors. It serves as a complementary device to the 2SD2457 NPN transistor. The series utilizes an epitaxial planar structure optimized for power amplification tasks within standard electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical characteristics such as voltage ratings and current capabilities when evaluating alternative components.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -40V.

How does the hFE rank affect performance?

Rank Q specifies a forward current transfer ratio (hFE) range of 80 to 160 at IC = -1A and VCE = -5V.

Is this component suitable for aerospace applications?

No, the datasheet explicitly states it is intended for standard applications and advises consulting sales staff for special applications like aerospace.