2SB1708TL

Single Bipolar Transistors Overview

The 2SB1708TL is a PNP bipolar junction transistor manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 3 A. The device operates with a power dissipation capacity of 500 mW and exhibits a gain-bandwidth product of 200 MHz. Key electrical characteristics include an emitter-base voltage of 6 V and a collector-emitter saturation voltage of 250 mV at specified test conditions. Packaged in the TSMT3 (SC-96) format, it supports a junction temperature up to 150°C.

Single Bipolar Transistors Feature Summary

• High current handling capability suitable for general-purpose switching and amplification tasks
• Optimized low-frequency performance with defined transition frequency specifications
• Compact surface-mount packaging designed for automated assembly processes

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Low-frequency signal processing stages
• Switching applications within voltage limits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to ensure correct tape-and-reel configuration and marking codes. Confirm that the TSMT3 package variant matches the required footprint for PCB layout. Cross-reference the datasheet revision date to validate current electrical parameters before finalizing component selection for production.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 30 V blocking capability and 3 A current capacity is required in a small outline package. Ensure the application duty cycle remains within the 500 mW thermal dissipation limits. Verify that the base drive requirements align with the saturation voltage characteristics for efficient switching operation in the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to ROHM's series of single PNP bipolar transistors intended for consumer and industrial electronics. The TSMT3 package provides a compact solution for space-constrained designs. It serves as a discrete alternative to integrated driver solutions where specific voltage and current thresholds are managed by external circuitry.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 30 V / 3 A / 500 mW specification and TSMT3 package. Verify pinout compatibility and hFE binning requirements. Consult manufacturer cross-reference lists for validated equivalents.