2SB772-GR-BP

Single Bipolar Transistors Overview

The MCC 2SB772-GR-BP is a PNP silicon plastic-encapsulated transistor designed for general-purpose switching and amplification applications. It features a collector current of 3.0 A, a collector-base voltage of 40 V, and a power dissipation capability of 1.25 W. The device operates within a junction temperature range of -55°C to +150°C. The GR suffix indicates a DC current gain (hFE) classification of 200 to 400 at IC=1.0 Adc and VCE=2.0 Vdc. It utilizes a TO-92 package with lead-free finish and RoHS compliance.

Single Bipolar Transistors Feature Summary

• High collector current capability of 3.0 A
• Low saturation voltage for efficient switching
• RoHS compliant and halogen-free available options
• Epoxy meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages
• Power supply regulation
• Driver circuits for loads up to 3 A

Single Bipolar Transistors Procurement Notes

Verify the GR binning code matches the required hFE range of 200-400. Confirm the BP bulk packaging quantity aligns with production needs. Ensure the supplier is an authorized MCC distributor to guarantee genuine parts and traceability. Check for the HF suffix if halogen-free specifications are mandatory for the assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current handling and moderate breakdown voltage is required. The GR bin ensures tight gain control for linear applications. Consider the TO-92 package constraints for thermal management in enclosed designs. Verify that the 1.25 W power dissipation rating suits the specific duty cycle and ambient temperature conditions of the target application.

Single Bipolar Transistors Part Context

This part belongs to the 2SB772 series of PNP silicon transistors manufactured by Micro Commercial Components. It is the complementary counterpart to the NPN 2SD882 transistor. The series is designed for rugged high-performance applications using planar technology. The device is classified as a medium-power transistor suitable for various electronic systems requiring reliable switching or amplification.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors with similar Ic, Vceo, and package dimensions. Verify pinout compatibility (Emitter, Collector, Base) before replacement. Ensure the replacement device meets or exceeds the 3.0 A current and 40 V voltage ratings. Check for equivalent hFE binning if gain consistency is critical.