Single Bipolar Transistors 2SB815-6-TB-E product image

2SB815-6-TB-E

$0.31
  • Description:TRANS PNP 15V 0.7A 3-CP
  • Series:-

SKU:6795ded87529 Category: Brand:

  
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2SB815-6-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 15V 0.7A 3-CP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB815-6-TB-E

  • Description:TRANS PNP 15V 0.7A 3-CP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:80mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 50mA, 2V
  • Power - Max:200 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-CP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB815-6-TB-E

2SB815-6-TB-E

Single Bipolar Transistors Overview

The onsemi 2SB815-6-TB-E is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum DC collector current of 700 mA and a collector-emitter voltage rating of 15 V. The device operates with a collector-base voltage of -20 V and an emitter-base voltage of -5 V. It supports a maximum operating frequency of 250 MHz and has a power dissipation capacity of 200 mW. The component is housed in a CP package with dimensions of 2.9 x 1.5 x 1.1 mm, suitable for single-transistor configurations up to a maximum junction temperature of +125 °C.

Single Bipolar Transistors Feature Summary

  • High-frequency operation capability up to 250 MHz
  • Compact surface-mount footprint for space-constrained designs
  • Single PNP transistor configuration

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-voltage amplifier stages
  • Signal processing applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the official onsemi datasheet before procurement. Confirm that the CP package variant matches the required PCB land pattern. Ensure compliance with RoHS directives if applicable to the target market. Cross-reference the manufacturer part number to avoid confusion with similar legacy or alternative packages.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage PNP transistor with moderate current handling is required for high-speed switching. The 250 MHz transition frequency makes it suitable for RF or fast digital applications. Consider the 200 mW power dissipation limit and thermal management requirements for the CP package. Compare against alternatives if higher voltage ratings or different packaging styles are needed.

Single Bipolar Transistors Part Context

This part belongs to the onsemi discrete transistor portfolio, specifically within the PNP BJT category. It is engineered for consumer electronics and general industrial applications requiring small form factors. The CP package provides a slim profile compared to traditional through-hole options, facilitating automated assembly processes in modern manufacturing environments.

Single Bipolar Transistors Replacement Considerations

Consult the official onsemi replacement guide for verified substitutes. Ensure any alternative maintains compatible pinout, voltage ratings, and package dimensions. Verify electrical characteristics such as hFE and fT to guarantee circuit performance equivalence.

2SB815-6-TB-E2SB815-6-TB-E
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