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2SC1567AR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 120V 0.5A TO-126B-A1. Review the specifications below when checking this part for your BOM.
The Panasonic 2SC1567AR is a silicon NPN epitaxial planar power transistor designed for low-frequency high-power driver applications. It operates with a collector current of 0.5 A and peak current of 1 A, dissipating up to 1.2 W at 25°C. The device features a TO-126B-A1 package that allows direct heat sink mounting without an insulator. Electrical ratings include a collector-emitter voltage (VCEO) of 100 V for the standard variant and 120 V for the 'A' variant, alongside a transition frequency (fT) of 120 MHz.
Verify the specific suffix against official documentation to confirm exact electrical parameters, particularly regarding collector-emitter voltage variations between standard and 'A' variants. Confirm RoHS compliance status and check the manufacturer's lifecycle page for maintenance or discontinuation updates before finalizing procurement plans.
Select this component when designing low-frequency power drivers requiring a robust NPN transistor with a 100 V rating. Ensure the application does not exceed the 1.2 W dissipation limit without adequate thermal management. Verify compatibility with the complementary 2SA0794 PNP transistor if utilizing a push-pull topology.
This component belongs to the Panasonic 2SC1567 family of silicon NPN epitaxial planar transistors. It is specifically engineered for general-purpose power applications and serves as the NPN counterpart to the 2SA0794 PNP transistor. The product line adheres to JIS C 7030 measurement standards.
Consult the manufacturer's official website for the most current replacement information. No specific substitute part numbers are documented in the provided datasheet.
The 2SC1567A variant has a maximum collector-emitter voltage (VCEO) of 120 V.
No, the TO-126B package is designed to be installed directly onto a heat sink without requiring an insulation plate.
The transition frequency is specified as 120 MHz under conditions of VCB = 10 V and IE = -50 mA.
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