2SC2229-O(MITIF,M)

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-

SKU:ddfcd541ae30 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2229-O(MITIF,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-O(MITIF,M)

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2229-O(MITIF,M)

2SC2229-O(MITIF,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2229 is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V minimum and a collector-base voltage rating of 200 V. The device supports a maximum collector current of 50 mA with a power dissipation capacity of 800 mW. Electrical characteristics include a typical transition frequency of 120 MHz and a maximum output capacitance of 5.0 pF. The DC current gain ranges from 70 to 240 depending on the specific classification suffix.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for robust high-voltage switching applications
Low output capacitance suitable for maintaining signal integrity in video circuits
High transition frequency enabling effective performance in driver stages

Single Bipolar Transistors Applications

Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., O, Y) to confirm the DC current gain binning requirements for your design. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in the datasheet documentation. Ensure the TO-92MOD package dimensions align with your PCB layout constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate current handling capabilities. The low output capacitance makes it particularly suitable for video output stages where signal fidelity is critical. Verify that the required hFE range matches the available classifications, such as 'O' for lower gain or 'Y' for higher gain, to ensure proper biasing stability.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor lineup manufactured using the PCT (Triple Diffused) process technology. It is housed in a JEDEC TO-92MOD package, providing a compact form factor for through-hole mounting. The device is designed for general electronics applications, including consumer appliances and office equipment, while excluding unintended uses in safety-critical systems.