2SC2229-O(SHP,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2229-O is a silicon NPN triple diffused transistor utilizing the PCT process, housed in a TO-92MOD package. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device exhibits a typical transition frequency of 120 MHz and a maximum output capacitance of 5.0 pF. DC current gain (hFE) for the 'O' classification ranges from 70 to 140 at 10 mA and 5 V. Absolute maximum ratings include a collector power dissipation of 800 mW and a junction temperature limit of 150 °C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with a minimum collector-emitter voltage rating of 150 V
• Low output capacitance designed to minimize signal loading effects
• High transition frequency suitable for high-speed switching applications

Single Bipolar Transistors Applications

• Black and White TV Video Output Applications
• High-Voltage Switching Applications
• Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm that the 'O' hFE binning requirement aligns with circuit design specifications before procurement. Ensure the TO-92MOD package dimensions match the target PCB layout constraints.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with low output capacitance is required for video or driver stages. The 150 V rating supports high-side switching tasks. Verify that the 50 mA continuous collector current meets load requirements. Consider the 800 mW power dissipation limit and thermal derating curves for ambient operating conditions above 25 °C.

Single Bipolar Transistors Part Context

This device belongs to the 2SC2229 series of silicon NPN transistors manufactured using Toshiba's PCT process. It is designed primarily for general electronics applications, specifically targeting video output circuits and high-voltage switching roles. The TO-92MOD package provides a compact form factor suitable for through-hole mounting on standard printed circuit boards.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2229-O?

The DC current gain (hFE) for the 'O' classification ranges from 70 to 140 when measured at a collector current of 10 mA and a collector-emitter voltage of 5 V.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 200 V at an ambient temperature of 25 °C.

How does the output capacitance affect performance?

The device has a maximum output capacitance (Cob) of 5.0 pF, which helps maintain signal integrity in high-frequency video output and switching applications.