2SC2229-Y(MIT1,F,M

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-

SKU:eb29183e6cd6 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2229-Y(MIT1,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-Y(MIT1,F,M

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2229-Y(MIT1,F,M

2SC2229-Y(MIT1,F,M

Single Bipolar Transistors Overview

The 2SC2229 is a silicon NPN triple diffused transistor manufactured using Toshiba's PCT process. It features a minimum collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device exhibits a typical transition frequency of 120 MHz and a maximum output capacitance of 5.0 pF. It operates within a junction temperature range up to 150 °C and dissipates up to 800 mW of power. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for high-voltage switching applications
Low output capacitance suitable for video output circuits
High transition frequency supporting driver stage audio amplifier functions

Single Bipolar Transistors Applications

Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact binning, marking codes, and environmental compliance status such as RoHS compatibility. Confirm that the requested variant matches the required DC current gain classification and packaging specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a minimum 150 V collector-emitter voltage rating and a 50 mA continuous collector current limit. Ensure the application demands a low output capacitance and high transition frequency characteristics compatible with the specified TO-92MOD package constraints.

Single Bipolar Transistors Part Context

This component belongs to the 2SC2229 series of small-signal NPN transistors produced by Toshiba Semiconductor and Storage. It utilizes a triple diffused structure designed for robust performance in consumer electronics and general-purpose switching environments.