2SC2229(TE6SAN1F,M

Single Bipolar Transistors Overview

The Toshiba 2SC2229 is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device exhibits a transition frequency of 120 MHz and low output capacitance of 5.0 pF. It operates within a junction temperature range up to 150 °C with a power dissipation rating of 800 mW. The component is housed in a TO-92MOD package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust high-voltage switching applications
• Low output capacitance suitable for minimizing signal distortion
• High transition frequency enabling effective performance at radio frequencies

Single Bipolar Transistors Applications

• Black and White TV Video Output Applications
• High-Voltage Switching Applications
• Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm lot number formatting requirements for specific labeling needs. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs. Ensure compliance with all applicable export laws and regulations regarding product usage.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring moderate voltage handling and small signal amplification. The TO-92MOD package facilitates through-hole mounting. Verify that the required DC current gain falls within the specified classification ranges. Consider thermal management strategies given the 800 mW power dissipation limit under continuous operation conditions.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of general-purpose small signal transistors manufactured using the PCT process. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems. The device complements other NPN types in the manufacturer's portfolio designed for audio and video signal processing tasks.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical characteristics such as breakdown voltage and current ratings. Package compatibility must be confirmed for direct replacement scenarios.

Single Bipolar Transistors FAQ

What is the minimum collector-emitter breakdown voltage?

The minimum collector-emitter breakdown voltage (VCEO) is 150 V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into categories O (70 to 140) and Y (120 to 240).

What is the typical transition frequency?

The typical transition frequency (fT) is 120 MHz when measured at VCE = 30 V and IC = 10 mA.