2SK4124

Single FETs, MOSFETs Overview

The onsemi 2SK4124 is an N-channel Power MOSFET designed for high-voltage applications. It features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 20A at 25°C ambient temperature. The device exhibits a maximum On-Resistance (Rds(on)) of 430mΩ at Vgs=10V and Id=8A. Gate-Source Voltage (Vgs) is rated at ±30V, with a maximum Gate Charge (Qg) of 46.6nC at Vgs=10V. Input Capacitance (Ciss) is 1200pF at Vds=30V. Power dissipation is specified as 2.5W at Ta and 170W at Tc. The component is housed in a TO-3PB package.

Single FETs, MOSFETs Feature Summary

• N-channel MOSFET technology optimized for high-voltage switching
• Soft recovery body diode characteristics with low reverse recovery charge
• Robust thermal performance via TO-3PB through-hole packaging

Single FETs, MOSFETs Applications

• High-frequency amplifiers
• RF circuits
• Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this part number before procurement planning. Confirm that the TO-3PB package dimensions match your existing board layout constraints. Ensure that the 500V rating and 20A current capacity align with your specific circuit requirements. Check for available replacement components if long-term supply is required.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling. The TO-3PB package facilitates efficient heat dissipation for power applications. Consider the 430mΩ Rds(on) value for efficiency calculations at the intended operating current. Verify gate drive compatibility with the 10V threshold for optimal switching performance.

Single FETs, MOSFETs Part Context

The 2SK4124 belongs to the single FET, MOSFET product category from onsemi. It is a discrete power transistor designed for robust performance in demanding electrical environments. The component utilizes metal oxide semiconductor technology to achieve its specified voltage and current ratings.

Single FETs, MOSFETs Replacement Considerations

The datasheet indicates the part status is obsolete. Users should identify equivalent N-channel MOSFETs with similar 500V/20A specifications and TO-3PB packaging. Cross-reference parameters such as Rds(on), Qg, and thermal resistance to ensure functional compatibility in existing designs.