2STW100

Single Bipolar Transistors Overview

The STMicroelectronics 2STW100 is a complementary power Darlington transistor configured as an NPN single unit. It operates with a maximum collector-emitter voltage of 80 V and a collector-base voltage of 80 V. The device supports a maximum DC collector current of 40 A, with a continuous collector current rating of 25 A. Power dissipation reaches 130 W in a TO-247 through-hole package. It features a minimum DC current gain (hFE) of 600 and functions up to a maximum operating temperature of +150 °C.

Single Bipolar Transistors Feature Summary

• High current gain capability for efficient signal amplification
• Robust thermal performance suitable for high-power applications
• Zener-protected gate structure for enhanced reliability

Single Bipolar Transistors Applications

• High-power switching circuits
• Audio amplifier stages
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the End-of-Life status before procurement, as the manufacturer has issued a discontinuance notification. Confirm RoHS compliance details directly from the official datasheet. Ensure the TO-247 through-hole package matches your PCB footprint requirements. Check for any specific handling instructions related to the component's age and storage conditions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current handling and significant voltage gain. The TO-247 package provides effective heat dissipation for power-intensive designs. Consider the 80 V voltage limit when designing circuits with higher supply rails. Evaluate the thermal resistance characteristics to ensure adequate heatsinking for sustained operation at full load currents.

Single Bipolar Transistors Part Context

This part belongs to the 2STW100 series of complementary power Darlington transistors manufactured by STMicroelectronics. It is categorized under discrete semiconductors, specifically transistors. The component utilizes a silicon planar epitaxial structure designed for robust performance in demanding electronic environments.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.