Bipolar RF Transistors 3MN03SF-TL-E product image

3MN03SF-TL-E

$0.04
  • Description:RF TRANS NPN 20V 320MHZ 3-SSFP
  • Series:-

SKU:c339209512c2 Category: Brand:

  
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3MN03SF-TL-E is listed in the Bipolar RF Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is RF TRANS NPN 20V 320MHZ 3-SSFP. Review the specifications below when checking this part for your BOM.

Bipolar RF Transistors specifications for 3MN03SF-TL-E

  • Description:RF TRANS NPN 20V 320MHZ 3-SSFP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:320MHz
  • Noise Figure (dB Typ @ f):3dB @ 100MHz
  • Gain:-
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 1mA, 6V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, Flat Leads
  • Supplier Device Package:3-SSFP
  • Grade:-
  • Qualification:-

Bipolar RF Transistors datasheet and documents for 3MN03SF-TL-E

3MN03SF-TL-E

Bipolar RF Transistors Overview

The 3MN03SF-TL-E is an N-channel silicon MOSFET manufactured by onsemi, designed for small-signal switching applications. It features a drain-source voltage rating of 30V and a continuous drain current capacity of 2.5A. The device is housed in a compact SC-75 (SOT-416) surface-mount package, designated as SMCP with the TL marking suffix. Key electrical characteristics include a typical on-state resistance of 0.18 ohms at a gate-source voltage of 4.5V and a total gate charge of 2.5nC. The component supports a maximum power dissipation of 0.8W and operates within a junction temperature range up to 150°C, making it suitable for low-power portable electronics.

Bipolar RF Transistors Feature Summary

  • N-channel silicon MOSFET construction optimized for general-purpose switching
  • Low on-state resistance for efficient power handling in small signals
  • Compact SC-75 surface-mount package for space-constrained designs
  • Fast switching capability supported by low gate charge

Bipolar RF Transistors Applications

  • Portable battery-powered devices
  • Small signal switching circuits
  • Low-power load management systems

Bipolar RF Transistors Procurement Notes

Verify the manufacturer datasheet for the specific 3MN03SF-TL-E part number to confirm current availability and exact electrical tolerances. Ensure that the SC-75 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Bipolar RF Transistors Selection Notes

Select this component when a 30V N-channel MOSFET with 2.5A current capability is required in a minimal footprint. Compare the 0.18 ohm Rds(on) at 4.5V against alternative packages if higher thermal performance or lower resistance is needed for the specific application load.

Bipolar RF Transistors Part Context

This component belongs to onsemi's lineup of small-signal MOSFETs intended for portable and battery-operated equipment. The SC-75 package provides a balance between thermal performance and board space efficiency, distinguishing it from larger through-hole or standard SMD alternatives in similar voltage classes.

Bipolar RF Transistors Replacement Considerations

Check for direct pin-compatible substitutes within the same voltage and current ratings. Verify that any replacement maintains the SC-75 package form factor and meets the 0.18 ohm Rds(on) specification at the intended drive voltage.

3MN03SF-TL-E3MN03SF-TL-E
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