3SK291(TE85L,F)

RF FETs, MOSFETs Overview

The 3SK291(TE85L,F) is an N-channel dual-gate MOS type RF transistor manufactured by Toshiba Semiconductor and Storage. Designed for high-frequency applications, this component operates at a frequency of 800 MHz with a gain of 22.5 dB. It features a drain-source breakdown voltage (Vds) of 12.5 V and a continuous drain current (Id) of 30 mA. The device requires a test voltage of 6 V and a test current of 10 mA during operation. With a noise figure of 2.5 dB and maximum power dissipation of 150 mW, it is housed in a compact 4-pin SMQ package.

RF FETs, MOSFETs Feature Summary

• Dual-gate MOS structure optimized for RF amplification
• High-frequency operation capability up to 800 MHz
• Low noise figure suitable for sensitive signal reception
• Compact surface-mount packaging for space-constrained designs

RF FETs, MOSFETs Applications

• TV tuner circuits
• UHF RF amplifier stages
• High-frequency signal processing modules

RF FETs, MOSFETs Procurement Notes

Verify the complete part number including the ordering suffix TE85L,F to ensure correct tape-and-reel packaging configuration. Confirm that the specified voltage and current ratings align with the target circuit requirements before procurement. Cross-reference the manufacturer's latest datasheet to validate pinout assignments and thermal characteristics for proper PCB layout integration.

RF FETs, MOSFETs Selection Notes

Select this component when designing UHF frequency amplifiers requiring low noise performance and high gain. The dual-gate architecture provides isolation benefits compared to single-gate devices. Ensure the application environment supports the 150 mW power dissipation limit. Consider the SMQ package dimensions for board space constraints and verify compatibility with automated assembly processes due to the small form factor.

RF FETs, MOSFETs Part Context

This part belongs to Toshiba's series of silicon MOSFETs designed specifically for television tuner and UHF radio frequency amplifier applications. The 3SK291 variant utilizes a dual-gate configuration to enhance stability and gain at high frequencies. It is distinct from other family members like the 3SK294, which may offer different noise figures or current ratings while sharing similar structural characteristics.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence carefully if considering alternatives, as dual-gate RF MOSFET parameters such as noise figure and gain are highly specific.