40N06

$0.91

Description：TO-252 MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2c9f10de7d62 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

40N06 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is TO-252 MOSFETS ROHS. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for 40N06

Description：TO-252 MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2928 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：105W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for 40N06

40N06

Single FETs, MOSFETs Overview

The UMW 40N06 is a surface-mount N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 50 A at 25°C case temperature. The device offers a typical on-state resistance (RDS(ON)) of 14 mΩ at VGS=10V and 16 mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.6 V typ, total gate charge of 50 nC, and maximum power dissipation of 105 W. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology design for low on-state resistance and reduced gate charge
High continuous drain current capability with robust avalanche energy rating
Lead-free product construction compliant with environmental standards

Single FETs, MOSFETs Applications

Load switching circuits
Pulse Width Modulation (PWM) applications
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and reel specifications. Confirm that the component meets required RoHS compliance standards for the intended assembly process. Cross-reference the datasheet absolute maximum ratings with system operating conditions to prevent thermal overstress during deployment.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with high current handling is required in a TO-252 package. Evaluate the RDS(ON) values at the specific gate drive voltage used in the target circuit to ensure efficiency targets are met. Consider the thermal resistance characteristics and available board space for heat dissipation when designing the power stage layout.

Single FETs, MOSFETs Part Context

This component belongs to the family of N-channel enhancement mode power MOSFETs manufactured by UMW. It is designed for general-purpose power switching applications requiring efficient conduction and fast switching speeds. The device integrates an intrinsic body diode suitable for inductive load driving scenarios.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60 V VDS, TO-252 package, and comparable RDS(ON) specifications. Verify pinout compatibility and thermal performance metrics before implementation.