6685_2N3906

Single Bipolar Transistors Overview

The onsemi 2N3906 is a general-purpose PNP silicon bipolar junction transistor designed for switching and amplifier applications. It features a maximum collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device operates within a temperature range of -55°C to +150°C and offers a transition frequency of 250 MHz with a power dissipation capacity of 625 mW.

Single Bipolar Transistors Feature Summary

• PNP silicon construction for general-purpose amplification and switching
• High thermal stability supporting operation up to 150°C junction temperature
• Low saturation voltage characteristics for efficient switching performance

Single Bipolar Transistors Applications

• General purpose amplification circuits
• Switching applications in digital logic interfaces
• Driver stages for relay or LED control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix code (e.g., TA, BU) against the datasheet to confirm packaging type and lead configuration. Ensure RoHS compliance status matches project requirements. Confirm availability through authorized distributors as production cycles may vary by region.

Single Bipolar Transistors Selection Notes

Select this component for low-power PNP switching tasks requiring standard TO-92 through-hole mounting. Compare hFE gain ranges and saturation voltages against circuit load requirements. Consider alternative packages like SOT-223 if surface mount space is constrained.

Single Bipolar Transistors Part Context

This part belongs to the widely used 2N3906 series of PNP transistors. It serves as a complementary counterpart to NPN devices like the 2N3904. The component is manufactured using silicon planar technology and is suitable for mass production in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC807, 2SA1015, and MPSA13. Verify pinout compatibility and electrical ratings before substitution.