7130LA100J

Memory IC Overview

The Renesas Electronics Corporation 7130LA100J is a dual-port static random-access memory (SRAM) integrated circuit. It provides an 8-kbit storage capacity organized as 1 kiloword by 8 bits. The device features asynchronous parallel interface with a maximum access time of 100 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 52-lead Plastic Leadless Chip Carrier (PLCC) package.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations from two separate ports.

Memory IC Applications

• Data buffering in high-speed digital systems
• Cache memory implementation in embedded processors
• FIFO buffer applications requiring concurrent port access

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance requirements against specific project standards, as this variant may not meet current environmental directives. Validate package integrity upon receipt, ensuring the PLCC-52 leads are undamaged and free from oxidation before soldering.

Memory IC Selection Notes

Select this component when dual-port functionality is required for 8-kbit SRAM applications. Ensure the design accommodates the 52-PLCC surface-mount footprint and 4.5V to 5.5V power supply constraints. Verify that the 100 ns access speed meets system timing requirements and that the operating temperature range aligns with environmental conditions.

Memory IC Part Context

This part belongs to the 7130LA series of dual-port SRAMs manufactured by Renesas Electronics. It serves as a legacy component within the broader memory portfolio, offering non-volatile-like performance characteristics for volatile storage needs. The series is designed for applications requiring high-speed data exchange between independent bus masters.

Memory IC Replacement Considerations

IDT7130LA100J