71321LA35TF8

Memory IC Overview

The Renesas Electronics Corporation 71321LA35TFG is a dual-port static random-access memory (SRAM) integrated circuit. It features a storage capacity of 16 kilobits organized as 2K by 8 bits. The device utilizes an asynchronous parallel interface with a maximum access time and write cycle time of 35 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 64-pin Thin Quad Flat Package measuring 10 by 10 millimeters. The component is classified as non-volatile memory technology.

Memory IC Feature Summary

• Supports simultaneous independent read and write operations at both Port A and Port B for concurrent data handling.

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data storage in industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix 'F8' indicates tape-and-reel packaging, which differs from tube or tray formats. Confirm RoHS compliance status as documentation may vary by production batch. Check for End-of-Life notices and validate available replacement part numbers before finalizing procurement plans.

Memory IC Selection Notes

Select this component when dual-port functionality is required for independent port access. Ensure the design accommodates the 64-TQFP package dimensions and 4.5V to 5.5V power requirements. Verify that the 35ns speed meets system timing constraints and that the commercial temperature range aligns with environmental conditions.

Memory IC Part Context

This part belongs to the 71321SA/LA series of dual-port SRAMs manufactured by Renesas Electronics. The series provides flexible memory solutions for applications requiring high-speed data transfer between two independent processors or bus masters without external arbitration logic.

Memory IC Replacement Considerations

Public confirmed substitute: 71321LA20TFG8.