7133LA35PFI8

Overview

The 7133LA35PFI8 is a dual-port static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 32 kilobits, organized as 2K words by 16 bits. The device features an asynchronous parallel interface with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x14 mm. The component is rated for an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous access by two processors
• Asynchronous operation allowing flexible timing integration without clock synchronization
• CMOS technology ensuring low power consumption during standby and active states

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data logging applications requiring rapid write cycles

Procurement Notes

Verify the specific suffix PFI8 against the official Renesas datasheet to confirm package dimensions and pinout compatibility. Confirm RoHS compliance status as manufacturing sites may vary. Check for End-of-Life notices or Production Change Notices that might affect long-term availability. Ensure the supplier provides original manufacturer documentation to validate authenticity.

Selection Notes

Select this component when dual-processor communication requires non-blocking memory access. Compare the 35ns access speed against system timing requirements. Evaluate the 100-pin TQFP footprint against available PCB space. Consider the 4.5V to 5.5V voltage range compatibility with existing logic levels. Assess thermal performance within the specified -40°C to +85°C operational envelope.

Part Context

This part belongs to the 7133SA/LA series of high-performance dual-port SRAMs. The 'LA' designation typically indicates commercial/industrial temperature grades compared to the 'SA' automotive grade variants. These devices are designed for applications demanding high bandwidth and low latency between multiple masters accessing shared memory resources simultaneously.

Replacement Considerations

Check for direct cross-references from IDT, which was previously associated with this product line. Verify pin-to-pin compatibility if substituting with other 100-pin TQFP dual-port SRAMs. Ensure equivalent access times and voltage specifications are met.