71342LA55J

Overview

The Renesas Electronics Corporation 71342LA55J is a CMOS dual-port static random access memory (SRAM) device. It provides a storage capacity of 32 kbit, organized as 4K words by 8 bits. The component features an asynchronous parallel interface with a maximum access time of 55 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 52-pin PLCC package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate ports.

Applications

• High-speed data buffering in embedded systems.

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm pinout compatibility and electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check for obsolescence notices or product discontinuance announcements prior to finalizing procurement plans.

Selection Notes

Select this component when a non-volatile-free, high-speed memory solution with independent read/write capabilities is required. Ensure the design accommodates the 52-PLCC footprint and 5V logic levels. Evaluate system timing constraints against the specified 55 ns access time to guarantee reliable operation.

Part Context

This part belongs to the Renesas 71342 series of dual-port SRAMs. These devices are designed for applications requiring fast, concurrent data access. The 71342LA55J specifically denotes the 55 ns speed grade within the LA variant family, utilizing standard CMOS technology for low power consumption relative to older bipolar technologies.

Replacement Considerations

Consult official Renesas documentation for verified cross-reference part numbers. Verify that any substitute maintains identical pin configurations, voltage ranges, and access speeds to ensure direct compatibility without circuit redesign.