7134LA20J

Overview

The Renesas Electronics Corporation 7134LA20J is a dual-port static random access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kilobits, organized as 4K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time and write cycle time of 20 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface mount installation in a 52-pin Plastic Leadless Chip Carrier package. The component is rated for commercial operating temperatures between 0°C and +70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two distinct processors or systems.

Applications

• High-speed data buffering in telecommunications equipment.

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact package type and compliance status. Confirm availability through authorized channels as this component may be subject to discontinuation notices. Ensure compatibility with existing system voltage levels and interface requirements before procurement.

Selection Notes

Select this component when a design requires independent concurrent read/write operations without bus contention. Verify that the 52-pin PLCC footprint fits the target printed circuit board layout. Confirm that the 20-nanosecond speed meets the timing constraints of the host processor interface.

Part Context

This part belongs to the Renesas 7134 series of CMOS dual-port SRAMs. These devices are designed for applications requiring high-speed data exchange between two masters. The 7134LA20J variant specifically utilizes the LA speed grade and J package code within this family lineage.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical characteristics carefully when considering alternative sources.