7134LA20JG

Overview

The Renesas Electronics Corporation 7134LA20JG is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kilobits, organized as 4K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 20 nanoseconds and a write cycle time of 20 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts. The component is housed in a 52-lead Plastic Leadless Chip Carrier (PLCC) package designed for surface mount technology. It supports an operating temperature range from 0 degrees Celsius to +70 degrees Celsius.

Feature Summary

• Dual-port architecture enabling independent simultaneous access via two separate port control sets.

Applications

• High-speed data buffering in embedded systems.

Procurement Notes

Verify the exact suffix designation against official manufacturer documentation, as variations such as JG or J8 may indicate differences in packaging or compliance status. Confirm current production status, as this model is listed as obsolete in multiple distributor records. Ensure compatibility with existing board layouts regarding the PLCC-52 footprint and pin configuration before procurement.

Selection Notes

Select this component when a compact, high-speed dual-port memory solution is required for applications needing independent read/write operations. The 20ns speed class suits moderate-frequency digital logic. Verify that the system power supply strictly adheres to the 4.5V to 5.5V specification to ensure reliable operation and prevent data corruption.

Part Context

This part belongs to the Renesas 7134LA series of CMOS dual-port SRAMs. These devices are engineered for applications requiring fast, non-volatile-like data retention during active power cycles without the complexity of synchronous clocking. The series typically offers various speed grades and package options to accommodate different design constraints.

Replacement Considerations

IDT7134LA20JG