7140SA35JI8

Overview

The Renesas Electronics Corporation 7140SA35JI8 is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 8 kilobits, organized as 1K words by 8 bits. The device features parallel interface access with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 52-lead Plastic Leadless Chip Carrier (PLCC) package measuring 19.13mm by 19.13mm. The component is rated for commercial operating temperatures between 0°C and 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate processors or systems.

Applications

• High-speed data buffering in communication equipment.

Procurement Notes

Verify the exact suffix designation against official manufacturer documentation, as variations exist between PLCC and ceramic DIP packages. Confirm RoHS compliance status, as specific variants may not meet current environmental standards. Check for End-of-Life notifications or discontinuance notices prior to procurement planning. Ensure the selected package type matches the intended PCB footprint and assembly requirements.

Selection Notes

Select this component when independent bidirectional data transfer is required without external arbitration logic. The 35ns speed class suits applications needing moderate latency. Verify that the 52-pin PLCC footprint aligns with existing board designs. Consider thermal management within the specified commercial temperature range during system integration.

Part Context

This part belongs to the IDT 7140SA series of high-performance dual-port SRAMs. These devices are designed for applications requiring fast, non-blocking data exchange between two masters. The series typically offers various speed grades and packaging options to accommodate different system constraints and form factors.

Replacement Considerations

Consult official replacement guides for equivalent dual-port SRAMs with matching pinouts and electrical characteristics. Verify compatibility regarding voltage levels and access times before substitution.