7142SA25JI

Overview

The Renesas Electronics Corporation 7142SA25JI is a dual-port static random access memory (SRAM) integrated circuit. It features a storage capacity of 16 kilobits, organized as 2K words by 8 bits. The device supports parallel interface communication with an access time of 25 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and is housed in a 52-pin Plastic Leadless Chip Carrier (PLCC) package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate systems
• Asynchronous operation for flexible integration into various digital logic designs
• CMOS technology providing low power consumption relative to older bipolar alternatives

Applications

• High-speed data buffering between asynchronous system components
• Cache memory implementation in embedded processing architectures
• Data storage in industrial control systems requiring reliable volatile memory

Procurement Notes

Verify component authenticity through authorized channels due to potential availability from secondary markets. Confirm RoHS compliance status and moisture sensitivity level requirements prior to assembly. Ensure proper handling procedures are followed during surface mount placement to prevent package damage.

Selection Notes

Select this component when dual-port functionality is required for concurrent read/write operations. Compare against single-port SRAMs if only one master device accesses the memory. Evaluate pin count compatibility with existing PCB layouts before finalizing the design choice.

Part Context

This part belongs to the 7142SA series of dual-port SRAMs manufactured by Renesas Electronics. The series typically offers varying speed grades and packaging options to suit different performance and form factor requirements in electronic equipment.

Replacement Considerations

Check for direct substitutes such as IDT7142SA25JI or other compatible dual-port SRAMs with identical pinouts and electrical specifications. Verify functional equivalence regarding access times and voltage levels before substitution.