71T75602S100BGI

Overview

The Renesas 71T75602S100BGI is a synchronous single data rate zero bus turnaround SRAM with an 18Mb capacity organized as 512K x 36. It operates at a clock frequency of 100 MHz with a 5 ns access time, supporting parallel interface communication. The device functions within a supply voltage range of 2.375V to 2.625V and is rated for industrial temperatures from -40°C to +85°C. It is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

• Supports high-speed parallel data transfer via synchronous SDR architecture
• Enables efficient bus utilization through zero bus turnaround technology
• Provides reliable operation across extended industrial temperature ranges

Applications

• High-performance networking equipment memory buffers
• Telecommunications system signal processing storage
• Industrial control systems requiring fast data access

Procurement Notes

This component has reached end-of-life status. Verify current availability through authorized distributors or secondary markets. Confirm RoHS compliance and moisture sensitivity levels before integration. Check for valid replacement options if long-term supply assurance is required for production cycles.

Selection Notes

Select this part when a 36-bit wide memory interface is necessary for specific data path architectures. Ensure the design supports the 2.5V core voltage requirements and accommodates the 119-pin BGA footprint constraints during PCB layout planning.

Part Context

Part of the IDT 71T75602 family of synchronous SRAMs designed for bandwidth-intensive applications. This specific variant offers a balance of speed and density suitable for embedded systems requiring rapid random access capabilities without pipeline latency overhead.

Replacement Considerations

Consider the 71T75602S100BGGI for identical electrical specifications with a different package marking or labeling configuration. Verify pin compatibility and thermal characteristics before substituting.