71T75602S133BG

Memory IC Overview

The IDT71T75602S133BG is a synchronous ZBT SRAM with an 18 Mbit capacity organized as 512K x 36. It operates at a maximum clock frequency of 133 MHz with a 4.2 ns access time. The device uses a 119-pin PBGA package and requires a supply voltage between 2.375 V and 2.625 V.

Memory IC Feature Summary

• Supports high-performance system speeds through zero-bus-turnaround architecture
• Features internally synchronized output buffer enable to simplify control logic
• Includes positive clock-edge triggered registers for fully pipelined applications

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network processors
• FIFO buffers in digital signal processing systems

Memory IC Procurement Notes

Verify the specific suffix against official Renesas documentation, as variations exist. Confirm RoHS compliance status, as some variants are non-compliant. Check for End-of-Life notices and lead times due to potential discontinuation. Ensure the 119-PBGA footprint matches the target design constraints.

Memory IC Selection Notes

Select this component when a 36-bit wide interface is required for high-throughput applications. Compare pinout compatibility with existing designs if replacing older IDT parts. Consider the 119-PBGA package size for board space limitations. Verify thermal requirements for the operating temperature range.

Memory IC Part Context

This part belongs to the IDT 71T75602/802 family of synchronous ZBT SRAMs. The series offers various configurations including 1M x 18 and 512K x 36 densities. These devices are designed for low-power, high-speed memory applications requiring simple interface protocols.

Memory IC Replacement Considerations

IDT71T75602S133PFI is a documented alternative in the TQFP-100 package. IDT71T75602S133BGI is another variant within the same speed grade. Verify electrical parameters and pin compatibility before substitution.