71T75602S150BGI8

Overview

The Renesas 71T75602S150BGI8 is a synchronous single data rate static random-access memory integrated circuit. It provides an 18 Mbit storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 150 MHz and features a typical access time of 3.8 ns. It utilizes a parallel interface and functions within a supply voltage range of 2.375 V to 2.625 V. The component is housed in a 119-pin plastic ball grid array package measuring 14x22 mm. It supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Supports high-speed synchronous operation at up to 150 MHz for efficient data throughput.
• Provides wide 36-bit data organization suitable for processor bus interfaces requiring error correction or extended word lengths.
• Operates on a standard 2.5V core voltage supply for compatibility with low-power logic systems.

Applications

• High-performance computing systems requiring fast cache memory
• Network infrastructure equipment such as routers and switches
• Industrial control systems demanding reliable volatile storage

Procurement Notes

Verify the specific suffix BGI8 against official Renesas documentation to confirm the exact package variant and moisture sensitivity level. Confirm RoHS compliance status as historical records indicate variations across the 71T75602 series. Check current lifecycle status, as many variants in this family have reached end-of-life. Ensure the supplier provides valid traceability documents for the 119-PBGA package type.

Selection Notes

Select this component when a 36-bit data width is required for system architecture compatibility. The 150 MHz speed grade offers a balance between performance and power consumption compared to faster variants. Consider the 119-PBGA footprint constraints during PCB layout. Verify thermal management capabilities for the specified industrial temperature range under maximum load conditions.

Part Context

This part belongs to the Renesas 71T75602 family of synchronous SRAM devices. The family includes various speed grades and package options, including TQFP and PBGA configurations. The 71T75602S150BGI8 specifically denotes the 150 MHz speed bin within the plastic ball grid array form factor. These devices are designed for applications requiring high-density, high-speed volatile memory solutions.

Replacement Considerations

Direct substitutes include other speed grades within the same 71T75602 family, such as the 71T75602S133BGI8 or 71T75602S166BGGI8, provided timing requirements allow. Verify pinout compatibility and electrical characteristics before substitution. Note that some family members may be discontinued.