71T75802S133PFGI

Overview

The 71T75802S133PFGI is a 18 Mbit synchronous static random access memory (SRAM) organized as 1M x 18. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The device utilizes a parallel interface and requires a supply voltage between 2.375 V and 2.625 V, with a maximum power current of 195 mA. It is housed in a 100-pin TQFP package suitable for surface mount technology. The component supports single data rate (SDR) operations and functions within a commercial temperature range of 0°C to +70°C.

Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates dead cycles during bus turnaround between read and write operations.
• Fully pipelined design with internally synchronized output buffer enable and positive clock-edge triggered registers.
• Supports individual byte write control via dedicated BW1-BW4 pins for flexible data masking.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment utilizing parallel SRAM interfaces
• Industrial control systems operating within commercial temperature ranges

Procurement Notes

Verify the specific suffix PFGI against official Renesas documentation to confirm the 100-TQFP package and commercial temperature grade. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notification. Ensure compatibility with existing board layouts regarding the TQFP-100 footprint and pin configuration before procurement.

Selection Notes

Select this component when a 133 MHz synchronous SRAM with ZBT functionality is required for 1M x 18 data width applications. It is suitable for designs needing low latency access without bus turnaround delays. Consider the 2.5V core voltage requirement and ensure power delivery meets the specified current limits. Verify that the commercial temperature range aligns with the operational environment constraints.

Part Context

This part belongs to the Renesas 71T75802 series of Zero Bus Turnaround synchronous SRAMs. The series offers high-speed memory solutions designed to optimize system performance by removing wait states associated with traditional SRAMs. The 71T75802S133 variant specifically targets applications requiring 133 MHz operation speeds within the standard commercial temperature envelope.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas Electronics for current obsolescence notices or recommended alternatives if this specific package or speed grade is discontinued.