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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.2 ns
- Grade:-
- Qualification:-
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Overview
The IDT71T75802S200PFGI8 is a 18Mb (1M x 18) synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It operates with a maximum clock frequency of 200 MHz and features a typical access time of 3.2 ns. The device utilizes a parallel interface and is supplied within a 100-pin TQFP package measuring 14x14 mm. It requires a core voltage supply ranging from 2.375V to 2.625V and supports an industrial operating temperature range of -40°C to +85°C.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
- Fully pipelined design with internally synchronized output buffer enable for high-speed data transfer.
- Supports individual byte write control via dedicated BW1-BW4 pins.
- Includes boundary scan JTAG interface compliant with IEEE 1149.1 standards.
Applications
- High-performance embedded systems requiring fast data buffering
- Data communication equipment and networking infrastructure
- Industrial automation controllers and real-time processing engines
Procurement Notes
Verify the specific suffix PFGI8 against official Renesas documentation to confirm pinout compatibility and moisture sensitivity level. Confirm that the 100-TQFP package variant matches your PCB footprint requirements. Ensure the 2.5V I/O voltage specification aligns with your system's logic levels. Check for any recent product change notices regarding packaging or material composition updates.
Selection Notes
Select this component when a 200 MHz synchronous SRAM with ZBT technology is required for 18-bit wide data paths. It is suitable for applications needing low-latency access times around 3.2 ns. Consider the 100-TQFP package if surface-mount assembly in a standard industrial temperature range is necessary. Compare against lower-speed variants like the 133 MHz or 166 MHz models if power consumption or timing constraints allow.
Part Context
This part belongs to the 71T75802 family of Zero Bus Turnaround synchronous SRAMs. The family offers various speed grades and package options, including BGA and TQFP configurations. These devices are designed to replace asynchronous SRAMs in high-speed digital systems, providing improved throughput without additional wait states. The 71T75802 series is widely used in telecommunications and computing applications.
Replacement Considerations
Direct substitutes include other speed grades within the same 71T75802 family, such as the 71T75802S166PFGI8 or 71T75802S133PFGI8, provided the slower clock speeds meet system requirements. Verify pin-to-pin compatibility and electrical specifications before substitution.
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