71T75902S75BGG8

71T75902S75BGG8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:6e5fca97ac80 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:7.5 ns
  • Grade:-
  • Qualification:-

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71T75902S75BGG8

Overview

The Renesas Electronics Corporation 71T75902S75BGG8 is a synchronous static random access memory (SRAM) integrated circuit. It features an 18 Mbit storage capacity organized as 1M x 18 bits. The device utilizes Single Data Rate (SDR) Zero Bus Turnaround (ZBT) technology with a parallel interface. It supports a maximum clock frequency of 133 MHz and offers a typical access time of 7.5 ns. Operating voltage ranges from 2.375 V to 2.625 V, with a maximum supply current of 225 mA. The component is housed in a 119-pin PBGA package measuring 14x22 mm and operates within a commercial temperature range of 0°C to +70°C.

Feature Summary

  • Employs Synchronous SDR ZBT architecture for high-speed data transfer without bus turnaround latency
  • Provides 18 Mbit density via 1M x 18 organization for efficient parallel memory access
  • Supports flow-through architecture for continuous read/write operations

Applications

  • High-performance embedded systems requiring fast cache memory
  • Network infrastructure equipment
  • Industrial control systems

Procurement Notes

Verify the End-of-Life (EOL) status before procurement, as this component may be discontinued or subject to obsolescence notices. Confirm RoHS compliance requirements, as specific variants may not meet current environmental standards. Ensure compatibility with existing PCB footprints and voltage levels during replacement planning. Check for moisture sensitivity handling requirements due to BGA packaging constraints.

Selection Notes

Select this component when synchronous SRAM with ZBT capabilities is required for low-latency applications. Compare against other 71T75902 variants based on access speed and package type. Ensure the system design accommodates the 2.5V core voltage and 119-pin BGA form factor. Consider thermal management for the PBGA package in enclosed environments.

Part Context

This part belongs to the Renesas 71T75902 series of synchronous SRAMs. It shares architectural similarities with other members like the 71T75902S85BGG8 but differs in access speed and clock frequency specifications. The series is designed for applications demanding reliable, high-speed memory solutions in compact packages.

Replacement Considerations

Publicly confirmed substitute part numbers include IDT71T75902S75BGG8.

71T75902S75BGG871T75902S75BGG8

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