71V016SA10BFG8

Overview

The Renesas Electronics 71V016SA10BFG8 is an asynchronous static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 1 Mbit, organized as 64K words by 16 bits. The device features a parallel interface and operates within a supply voltage range of 3.0 V to 3.6 V. It has a maximum access time of 10 ns and a maximum power supply current of 150 mA. The component is housed in a 48-pin CABGA package and supports surface-mount installation.

Feature Summary

• Asynchronous operation with parallel data interface
• High-speed 10 ns access time for rapid data retrieval
• Single 3.3 V power supply compatibility

Applications

• General-purpose high-speed buffer memory
• Cache memory systems
• Data acquisition applications

Procurement Notes

Verify the specific suffix BFG8 against official Renesas documentation to confirm pinout and package dimensions. Ensure the selected variant matches the required operating temperature range and humidity sensitivity level for the target application environment before finalizing procurement.

Selection Notes

Select this component when a 64K x 16 organization is required with 10 ns speed performance. Consider the 48-pin CABGA package constraints for PCB layout. Verify that the 150 mA maximum current draw fits within the system's power budget and thermal design capabilities.

Part Context

This part belongs to the IDT 71V016 series of asynchronous SRAMs manufactured by Renesas Electronics. The series offers various speed grades and packaging options to support diverse embedded memory requirements in industrial and consumer electronics.

Replacement Considerations

Check for direct cross-references from IDT or other manufacturers offering identical 64Kx16 10ns specifications in a 48-CABGA package. Confirm electrical and mechanical compatibility before substitution.