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71V016SA12YG is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 1MBIT PARALLEL 44SOJ. Review the specifications below when checking this part for your BOM.
The Renesas Electronics Corporation 71V016SA12YG is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM). It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V and features a maximum access time of 12 ns. The device utilizes a parallel interface and is housed in a 44-pin Small Outline J-Lead (SOJ) package designed for surface-mount technology. It supports standard dynamic random-access memory (SDR) storage types and functions within a commercial temperature range of 0°C to +70°C.
Verify component authenticity through authorized channels as the part may be subject to obsolescence notices. Confirm RoHS compliance status via official datasheets before integration. Ensure handling procedures account for moisture sensitivity classification during storage and assembly processes.
Select this component for designs requiring 64K x 16 word organization with 12 ns speed. Compare against TSOP or CABGA packages if board space constraints differ. Verify that the 44-pin SOJ footprint matches existing PCB layouts and that thermal dissipation meets operational limits at maximum current draw.
This SRAM belongs to the 71V016SA series, which provides various speed grades and packaging options. The 'Y' suffix typically denotes the SOJ package variant. Related models include IDT71V016SA12PHG8 for TSOP packaging and other speed variants like 10ns or 15ns access times within the same memory architecture family.
IDT71V016SA12PHG8 offers identical electrical specifications but uses a TSOP-44 package instead of SOJ.
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