71V016SA12YG

Overview

The Renesas Electronics Corporation 71V016SA12YG is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM). It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V and features a maximum access time of 12 ns. The device utilizes a parallel interface and is housed in a 44-pin Small Outline J-Lead (SOJ) package designed for surface-mount technology. It supports standard dynamic random-access memory (SDR) storage types and functions within a commercial temperature range of 0°C to +70°C.

Feature Summary

• Asynchronous operation without clock or refresh requirements
• Single 3.3V power supply compatibility
• LVTTL-compatible inputs and outputs

Applications

• High-performance processor secondary cache systems
• Industrial control applications requiring fast data access
• Consumer electronics utilizing 3.3V logic levels

Procurement Notes

Verify component authenticity through authorized channels as the part may be subject to obsolescence notices. Confirm RoHS compliance status via official datasheets before integration. Ensure handling procedures account for moisture sensitivity classification during storage and assembly processes.

Selection Notes

Select this component for designs requiring 64K x 16 word organization with 12 ns speed. Compare against TSOP or CABGA packages if board space constraints differ. Verify that the 44-pin SOJ footprint matches existing PCB layouts and that thermal dissipation meets operational limits at maximum current draw.

Part Context

This SRAM belongs to the 71V016SA series, which provides various speed grades and packaging options. The 'Y' suffix typically denotes the SOJ package variant. Related models include IDT71V016SA12PHG8 for TSOP packaging and other speed variants like 10ns or 15ns access times within the same memory architecture family.

Replacement Considerations

IDT71V016SA12PHG8 offers identical electrical specifications but uses a TSOP-44 package instead of SOJ.