71V016SA20YGI

71V016SA20YGI

  • Description:IC SRAM 1MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:74ea3c90c6b9 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 1MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:1Mbit
  • Memory Organization:64K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:20ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:20 ns
  • Grade:-
  • Qualification:-

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71V016SA20YGI

Overview

The Renesas Electronics 71V016SA20YGI is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3V power supply with a voltage range of 3V to 3.6V. The device features a 20 ns access time and supports parallel interface communication. It is housed in a 44-pin BSOJ (Small Outline J-Lead) package, specifically identified as 44-SOJ with a width of 10.16mm. The component is designed for surface-mount installation and functions within an industrial temperature range of -40°C to +85°C.

Feature Summary

  • Asynchronous operation without requiring external clocks or refresh cycles
  • Low standby current consumption for extended battery life in portable applications
  • LVTTL-compatible inputs and outputs for direct interfacing with logic circuits
  • Industrial temperature grade capability for reliable performance in harsh environments

Applications

  • High-performance processor secondary cache systems
  • Industrial equipment requiring robust memory storage
  • Portable devices utilizing low-power static RAM
  • Embedded systems needing fast random access data buffering

Procurement Notes

Verify the specific package variant and lead-free status against the manufacturer's latest datasheet before ordering. Confirm that the 44-BSOJ form factor matches the target PCB footprint requirements. Check for any product discontinuance notifications or end-of-life declarations from Renesas Electronics, as this part number may have limited availability or be subject to obsolescence management protocols.

Selection Notes

Select this component when a 64K by 16-bit organization is required for asynchronous data storage. Ensure the design accommodates the 3.3V logic levels and LVTTL compatibility. Consider the physical dimensions of the 44-BSOJ package during layout planning. Verify that the 20 ns access speed meets the system timing constraints for the intended application environment.

Part Context

This SRAM belongs to the IDT/Renesas 71V016 series, which provides high-speed non-volatile-like performance through static memory technology. The series is known for its reliability in industrial and commercial applications. The 71V016SA20YGI specifically denotes the 20 ns speed grade and the SOJ package style, distinguishing it from TSOP or other pin-compatible variants within the same memory capacity family.

Replacement Considerations

Alliance Memory AS7C31026B-12JIN is listed as a similar replacement option. Verify electrical compatibility and pinout alignment before substitution.

71V016SA20YGI71V016SA20YGI

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