71V25761S183PFG8

Memory IC Overview

The Renesas Electronics Corporation 71V25761S183PFG8 is a synchronous SDR SRAM memory IC with a total capacity of 4.5 Mbit, organized as 128K words by 36 bits. It features a parallel interface and operates at a clock frequency of 183 MHz with an access time of 3.3 ns. The device supports a supply voltage range of 3.135V to 3.465V and functions within a commercial temperature range of 0°C to 70°C. It is housed in a 100-TQFP (14x20) surface-mount package.

Memory IC Feature Summary

• Supports burst mode operations for efficient data transfer
• Includes dedicated write, data, address, and control registers
• Utilizes 3.3V CMOS technology for low power consumption

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory in embedded processing applications
• Network equipment signal processing

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to potential counterfeit risks. Confirm RoHS compliance status as the part may not meet current environmental standards. Check for end-of-life notices or alternative package options if long-term supply stability is required for production planning.

Memory IC Selection Notes

Select this component when a 36-bit wide data path is necessary for system architecture compatibility. Ensure the design accommodates the specific 100-pin TQFP footprint and thermal requirements. Validate that the 183 MHz speed meets the timing constraints of the host processor interface.

Memory IC Part Context

This part belongs to the 71V25761S family of synchronous SRAMs from Renesas. It shares core specifications with other variants like the 71V35761SA but differs in package type and specific speed grade suffixes. The family is designed for high-performance memory applications requiring fast access times.

Memory IC Replacement Considerations

Check for direct pin-compatible substitutes within the same family. Verify if newer revisions offer improved environmental compliance while maintaining electrical equivalence.