71V321L55J

Overview

The Renesas Electronics Corporation 71V321L55J is a static random access memory device with a storage capacity of 16 kbit, organized as 2K x 8. It features an asynchronous parallel interface and a maximum access time of 55 ns. The component operates within a supply voltage range of 3 V to 3.6 V, with a maximum power current of 100 mA. It supports surface mount installation in a 52-PLCC package and functions within a temperature range of -40°C to +85°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous access
• Asynchronous operation for flexible system integration
• Low voltage compatibility for efficient power management

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data storage in industrial control units

Procurement Notes

Verify the specific suffix J against official documentation to confirm package type and pinout configuration. Confirm RoHS compliance status as historical records indicate potential non-compliance for this variant. Check for active End-of-Life notices or obsolescence warnings from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when dual-port functionality is required for concurrent read/write operations. Ensure the design accommodates the 52-PLCC footprint and validates the 3V to 3.6V operating voltage window. Consider thermal performance within the specified industrial temperature range during board layout.

Part Context

This part belongs to the 71V321L series of dual-port SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other members of the family but differs in speed grade and voltage specifications. The 'L' designation typically indicates low-voltage operation compared to standard voltage variants.

Replacement Considerations

Official upgrade alternatives include the 71V321L55JI8. Verify pin compatibility and electrical parameters before substitution.