71V321L55TF8

Overview

The Renesas Electronics 71V321L55TF8 is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 16 kilobits, organized as 2048 words by 8 bits. The device features asynchronous parallel interface operation with a maximum access time of 55 nanoseconds. It operates within a supply voltage range of 3.0 volts to 3.6 volts and supports surface-mount installation in a 64-terminal thin quad flat package measuring 10 by 10 millimeters.

Feature Summary

• Supports simultaneous independent read and write operations through two distinct port interfaces
• Utilizes asynchronous logic for flexible system integration without clock synchronization requirements
• Employs parallel data bus architecture for standard digital signal interfacing

Applications

• Data buffering in high-speed communication systems
• Cache memory implementation in embedded processing units
• Temporary storage for real-time control applications

Procurement Notes

Verify the specific suffix TF8 against current manufacturer documentation to confirm package dimensions and pin configuration. Confirm RoHS compliance status as official records indicate non-compliance for this specific part number variant. Check component lifecycle status prior to procurement planning.

Selection Notes

Select this component when dual-port functionality is required for concurrent data handling. Ensure the design accommodates the specified 3.0V to 3.6V operating voltage range. Verify that the 64-TQFP footprint matches the printed circuit board layout constraints.

Part Context

This component belongs to the 71V321L series of dual-port SRAM devices manufactured by Renesas Electronics. The series offers various speed grades and packaging options to suit different performance and physical integration requirements in electronic systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.