71V321S55J8

Overview

The Renesas Electronics 71V321S55J8 is a dual-port static random-access memory (SRAM) device with a storage capacity of 16 kbit, organized as 2K x 8. It features an asynchronous parallel interface and supports a supply voltage range from 3 V to 3.6 V. The component has a maximum access time of 55 ns and a maximum power supply current of 115 mA. It operates within a commercial temperature range of 0°C to +70°C and is housed in a 52-pin PLCC package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access to the same memory array by two separate masters.

Applications

• High-speed data buffering in communication systems
• Cache memory for microprocessors
• Real-time data logging applications

Procurement Notes

Verify RoHS compliance status carefully, as documentation indicates non-compliance for this specific part number. Confirm end-of-life status and availability through authorized channels, as standard distribution may be limited or discontinued. Ensure moisture sensitivity level handling procedures are followed during assembly.

Selection Notes

Select this component when a dual-port SRAM solution is required for asynchronous parallel interfaces. Verify that the 55 ns access speed meets system timing requirements. Ensure the operating temperature range aligns with the application environment and that the PLCC package fits the PCB layout constraints.

Part Context

This device belongs to the 71V321S series of dual-port SRAMs manufactured by Renesas Electronics. It provides high-performance memory solutions for applications requiring concurrent read/write operations from two different ports without bus contention.

Replacement Considerations

Check for direct pin-compatible replacements within the 71V321 family, such as variants with different access speeds or packages. Verify electrical compatibility before substitution.