71V3556SA100BG8

Memory IC Overview

The 71V3556SA100BG8 is a synchronous static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit organized as 128K x 36. The device operates with a maximum clock frequency of 100 MHz and an access time of 5 ns. It utilizes a parallel interface and supports SDR ZBT technology. The power supply voltage ranges from 3.135 V to 3.465 V. The component is housed in a 119-PBGA package measuring 14x2 mm. It is designed for surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
• Synchronous Single Data Rate (SDR) operation with fully pipelined data path.
• Internally synchronized output buffer enable removes the need for external OE control.

Memory IC Applications

• High-performance processor secondary cache systems
• Network routing and switching equipment buffers
• Telecommunications base station signal processing

Memory IC Procurement Notes

Verify current availability status as this component has been officially declared End-of-Life by the manufacturer. Confirm that the specific 119-PBGA package variant matches the target board footprint requirements. Ensure compliance with RoHS non-compliance declarations if environmental regulations apply to the final assembly. Check for any post-production changes documented in Product Change Notices regarding substrate or labeling updates.

Memory IC Selection Notes

Select this part when a 100 MHz synchronous SRAM with 36-bit width is required for pipeline applications. The ZBT feature is critical for designs needing continuous data flow without turnaround latency. Verify that the 3.3V core voltage and 2.5V I/O voltage levels align with the system power rails. Consider the 119-PBGA package constraints for PCB layout and thermal management during the design phase.

Memory IC Part Context

This component belongs to the 71V3556SA series of high-speed synchronous SRAMs. It shares architectural similarities with other members like the 71V3556SA100BQI but differs in package type and moisture sensitivity handling. The series is characterized by its ability to handle burst accesses efficiently, making it suitable for bandwidth-intensive digital signal processing tasks in embedded systems.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available due to the End-of-Life status. Designers should evaluate alternative synchronous SRAM families from Renesas or other manufacturers that offer similar 128K x 36 organization and ZBT capabilities. Ensure pin compatibility and electrical specifications match before substituting.