71V3556SA133BGG8

Memory IC Overview

The Renesas Electronics Corporation 71V3556SA133BGG8 is a static random access memory device organized as 128K x 36, providing a total storage capacity of 4 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The component utilizes a parallel interface and requires a power supply voltage ranging from 3.135 V to 3.465 V. Maximum power consumption is specified at 310 mA. The device supports an operating temperature range from -40°C to +85°C and is housed in a PBGA-119 package.

Memory IC Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write operations.
• Synchronous Single Data Rate architecture with internally synchronized output buffer enable.
• Positive clock-edge triggered address, data, and control signal registers for pipelined applications.
• Supports four-word burst capability in either interleaved or linear modes.

Memory IC Applications

• High-speed digital signal processing systems
• Network infrastructure equipment requiring low-latency buffering
• Industrial automation controllers
• Telecommunications base stations

Memory IC Procurement Notes

Verify the specific suffix BGG8 against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status as sources indicate non-compliance. Check current lifecycle status as the product may be obsolete or subject to production changes. Ensure compatibility with system voltage requirements before integration.

Memory IC Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. The 133 MHz speed grade suits applications requiring fast data retrieval. Verify that the 119-pin BGA package fits the PCB layout constraints. Consider the -40°C to +85°C industrial temperature range if operating in harsh environments compared to commercial grades.

Memory IC Part Context

This part belongs to the 71V3556 series of synchronous ZBT SRAMs. The series offers various speed grades and package options to accommodate different design requirements. The SA suffix typically denotes specific speed binning within the family. These devices are designed to replace asynchronous SRAMs in high-performance embedded systems.

Memory IC Replacement Considerations

Consult official Renesas datasheets for confirmed substitute part numbers within the 71V3556 family. Verify pinout compatibility and electrical specifications before substituting. No public substitute part numbers are explicitly confirmed in the provided source material.