71V3557S75BG

Overview

The IDT71V3557S75BG is a high-speed synchronous SRAM organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features a typical access time of 7.5 ns. The device utilizes a 3.3 V supply voltage range of 3.135 V to 3.465 V and employs ZBT technology for efficient data transfer. It is housed in a 119-pin PBGA package measuring 14 x 22 mm.

Feature Summary

• Supports burst mode operations with an internal burst address counter for sequential data access.
• Features flow-through architecture with no registers in the data output path.
• Enables single-cycle deselect capability for flexible system control.

Applications

• High-performance cache memory systems
• Telecommunications equipment
• Network infrastructure devices

Procurement Notes

Verify the specific suffix against official Renesas or IDT documentation to confirm pinout compatibility and electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure the supplier provides valid traceability documents for this discontinued component series.

Selection Notes

Select this component when a 36-bit wide interface is required for processor bus matching. Consider the 7.5 ns access speed for latency-sensitive applications. Verify that the 119-pin BGA footprint matches the target PCB design constraints and thermal requirements.

Part Context

This part belongs to the IDT 71V3557 family of synchronous ZBT SRAMs. It shares architectural similarities with other members like the IDT71V3556 and IDT71V3558, differing primarily in speed grades and organizational parameters. The family is designed for high-bandwidth memory applications.

Replacement Considerations

Check for direct substitutes within the 71V3557 series such as IDT71V3557S75BGI8. Verify pin-to-pin compatibility and electrical specifications before replacing.